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Thermal Resistance Analysis of High Power Light Emitting Diode Using Aluminum Nitride Thin Film Coated Copper Substrates as Heat Sink
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: AlN thin film was coated over Cu substrate (575 mm2) with 400 nm thickness using DC sputtering for thermal interface material (TIM) application. Aluminum Nitride (AlN)coated Cu substrate (AlN/Cu) was used as a heat sink ...
Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: All solidstate lighting products produce heat which should be removed by use of a heat sink. Since the two mating surfaces of light emitting diode (LED) package and heat sink are not flat, a thermal interface material (TIM) ...